.algan / Gan Microwave Power Device Modeling And Power Synthesis Of Research

In recent years, with the demand of high temperature, high frequency, resist radiation, high performance requirements ,as the representative of the third generation of semiconductor materials, GaN has got rapid development. AlGaN/GaN HEMT devices have broad prospects and huge potential in the fields of high temperature, high frequency, high performance, and resist radiation. Accurate device model is very important for the design of microwave and RF circuit.This paper made a study around AlGaN/GaN HEMT device models, established a equivalent circuit model AlGaN /GaN HEMT device and extracted the parameters, microwave power synthesis are analyzed,a GaN HEMT microwave power combination circuit is designed with the software ADS.Firstly, this paper introduces AlGaN /GaN HEMT device's structure and working principle. Several small signal models were analyzed. Based on the analysis of small signal linear analysis, AlGaN/GaN HEMT small signal equivalent model were discussed in details. A suitable small signal equivalent model was established. The extraction of the parameters of the model was also studied.Secondary, introduced several big I-V characteristics of DC signal model based on the large signal working condition. A study which is based on Angelov model was made. Finally, microwave power amplifiers were introduced according to the category. This paper designed a microstrip Wilkinson type power synthesizer/synthesizer with a center frequency of 5.0 GHz.?AlGaN/GaN HEMT microwave power amplifiers with the center frequency of 5.0 GHz were designed .For the single pipe amplifier,the maximum output power was 32dBm,and the additional power efficiency was 34%. For the double pipe amplifier,the maximum output power of single pipe amplifier was 35.3dBm, additional power efficiency was 28%.