Design And Research Of Dual DBR Semiconductor Laser

Dual-wavelength semiconductor lasers have important applications in many fields,because of the advantages of high efficiency,compact structure,easy to use,and so on.In this thesis,the structure and parameter design of dual-wavelength semiconductor lasers are studied systematically,using RSoft optical design software to simulate the output of 1030 nm and 1064 nm dual semiconductor laser.Our main work:1.The Y-shaped waveguide is simulated and the length and the bifurcation angle of the Y-shaped waveguide are determined.When the length of the input waveguide is 2000?m,the length of the input waveguide is 1000?m,the length of the output straight waveguide is 6000?m,and the angle is 0.5 degrees,the transmission loss of the single mode laser in the waveguide is the smallest.2.Based on the theoretical analysis of the wide stripe lasers,the tapered cavity structure is used to realize the purpose of amplifying the output power of the device and ensuring the luminous flux of the device.The optimal cavity length(the length of the ridge and tapered regions)and the taper angle of the device are fitted with BeamProp.The length of the ridge waveguide is 1500 um,the length of the tapered waveguide is 2500 um,the taper angle is 0.92 degrees,the input waveguide width is 4um,and the output waveguide width is 40 um.3.Simulation and process research of dual DBR semiconductor lasers were carried out.The threshold current of the device at room temperature is 42 mA,when the injection current is 70 mA,the continuous output power reaches 7mW,the spectral center wavelength is 1064.63 nm,the spectral linewidth is only 0.12 nm.