Research On Influence Of DBR Reflectivity On The Performance Of Dual-DBR Semiconductor Laser

Dual-wavelength semiconductor lasers with high efficiency,compact structure have important applications in many areas.In this paper,a dual-wavelength semiconductor laser based on distributed Bragg reflectance(DBR)semiconductor laser is designed.The laser is composed of DBR grating,phase region,gain region and Y-waveguide.The designed wavelengths are 1064 nm and 1030 nm.The reflectivity characteristics of DBR gratings under different structural parameters are simulated by beam propagation method(BPM).The change of the reflectivity peak and full-width-at-half-maximum(FWHM)was calculated.We also disscused the relationship between the duty cycle,etching depth and coupling coefficient of DBR grating.Finally,the threshold and spectral characteristics of 1064 nm DBR lasers are simulated and compared with the experimental results.Furthermore,the effect of DBR reflectivity on the device performance is analyzed.The dual-wavelength semiconductor lasers are simulated and analyzed with reference to the analysis results.The effect of DBR reflectivity on the spectral characteristics and time-domain characteristics is analyzed.