Study Resistive Random Access Memory Performance Of Two-dimensional Material Bi₂Te₃

In today's society of ever-changing semiconductor technology,we are not only more and more demand for non-volatile memory,but also more and more demanding for its performance,Such as: high density,high speed,high flexibility,low power consumption,low cost,simple structure and so on.At present,with dropped performance of the charge retention significantly and high device power consumption,the mainstream nonvolatile memory has been difficult to meet the industry's higher requirements,is facing a severe test,because of its own structural constraints.Therefore,it is of great significance to develop a new type of nonvolatile memory with superior performance.At present,the high degree of concern of the new non-volatile memory are the following:?1?magneto resistive access memory?MRAM?;?2?ferroelectric resistive access memory?FeRAM?;?3?phase change resistive access memory?PRAM?;?4?resistive random access memory?RRAM?,Because of its own shortcomings,the first few can not become mainstream non-volatile memory.The resistive random access memory?RRAM?has a simple structure,high integration potential,high retention and faster read and write speed,and low operating voltage,has become a potential new non-volatile memory,it has got deep concerned by the industry.In the nature,many materials have been confirmed with a resistance characteristics that classified the following categories:?1?binary metal oxides,such as: NaO,Fe₂O₃,GO,etc.;?2?ternary perovskite type oxide,Such as: BiFeO₃;?3?metal organic framework MOF materials;?4?protein and other oxides and insulating materials.The Bi₂Te₃ studied in this paper is a three-dimensional strong topological insulator structure,which has a simple surface state structure and a special band gap.This paper has done a series of work on the performance improvement of Bi₂Te₃ material resistive memory.First,from the preparation method of Bi₂Te₃ material,we described the process of preparing Bi₂Te₃ material by chemical vapor deposition?CVD?method,and analyzed the effects of growth conditions on the properties of the prepared devices.In this paper,Bi₂Te₃ was prepared by hydrothermal synthesis.It was suggested that with change of the concentration of NaOH was different during the preparation of Bi₂Te₃ material.the performance of the resistance characteristics of different,of which 8mol / L is best.And then,in the process of preparing Bi₂Te₃ material into the device,it is found that the device has different resistancecharacteristics,so that the preparation method of the filtration and transfer can better exhibit the resistance characteristics of the device.Then,we doped the Bi₂Te₃ material with Graphene Oxide,and found that the performance of the Bi₂Te₃ material was improved,the stress applied to the device did not change its resistance characteristics obviously,and the conductivity mechanism of the Bi₂Te₃ material resistive memory was analyzed.Finally,the series of experimental work summary,the resistance to the memory to make a prospect.