| Over the past twenty years,with the continuous development of semiconductor technology,continuous improvement,integrated circuit manufacturing has become China's largest electronic information industry.In recent years,with the strong support of the country,the semiconductor technology manufacturing industry in China has formed a stable stage and the wafer size has increased from 6 inch to 8 inch until now 12 inch silicon substrate.Due to the continuous increase of the substrate,the bending of the silicon wafer and the warping degree will be more serious,in the high temperature process(such as oxidation,diffusion,etc.)for a number of integrated circuit manufacturing plants.So it is difficult to focus at the process of the lithography,and it is easy to cause defocus defect in the production line.Thus the wafer electrical parameters and the product yield ratio are greatly affected.The silicon substrate production also cannot avoid trace of deformation and bending.The deformation bending occurs in the subsequent integrated circuit processing and the process of high temperature heat treatment.Heat and other mechanical stress may increase the degree of deformation.In this paper,we study the influence of silicon wafer bending defect in process manufacture,explain the abnormal of the silicon wafer bending,describe the process of the silicon wafer bending formation.Related experiments were carried out and the relevant test data are summarized.From the control process of wafer wire-electrode cutting point,we explain how to avoid the wafer blending abnormal,summarize the process of silicon wafer bending formation and point out the optimize method of wafer bending abnormal.We carry out depth discussion of research results and put the direction of further research forward.This is very important for improving the quality of silicon substrate or reducing the defect occurrence rate of integrated circuits,and even improving the performance and reliability of the encapsulated device. |
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