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Research On Femtosecond Laser Processing Technology Assisted By Ion Beam Etching

Posted on:2018-04-19Degree:MasterType:Thesis
Country:ChinaCandidate:W G YaoFull Text:PDF
GTID:2348330515478213Subject:Physical Electronics
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In the past twenty years,the application of femtosecond laser direct writing technology has attracted much attention of researchers.Compared with the traditional manufacturing technology such as turning machines,this technology has a great advantage in processing precision and processing complexity.The processing precision is far beyond the optical diffraction limit,and can be used to produce arbitrary threedimensional complex structures in polymer materials.This is determined by the twophoton absorption properties of polymers.However,it is very difficult to construct 3D structures using this technology in hard materials such as sapphire,silicon and so on.This paper presents a new method of using ion beam etching(IBE)combined with femtosecond laser processing technology to complete the processing of transfer of three-dimensional structure in hard materials.The core idea of this method is using the superb processing of femtosecond laser processing technology in polymer,combined with the limitless characteristics of ion beam etching,which can transfer the three-dimensional structure of the polymer into hard materials.It is theoretically possible.In order to verify the feasibility of the method,the method of UV lithography was used in polymeric materials to produce mask pattern and completed the pattern transfer in hard material after ion beam etching.The feasibility is proved by experiments.Then the detailed system was implemented to explore the parameters of ion beam etching effect,including ion energy,ion beam density and so on,and solved a series of the problems in experiment,including photoresist carbonization,surface roughness and steepness etc..According to the experimental results,the three-dimensional mask structure is designed and fabricated by femtosecond laser,then etched by ion beam with optimal parameters.The pre designed three-dimensional structure were transferred successfully both in silicon and sapphire.The transferred contour maintained good morphology,with smooth and clear surface,and achieved the desired effects.The transfer method provides a new way for the modification of materials,and both in theory and experiment is effective and feasible.I hope the method proposed in this paper can provide some inspiration for more scientific research workers,and can be improved and perfected,at the same time,resulting in more research achievements.
Keywords/Search Tags:3D transfer, Femtosecond laser direct writing technology, Ion beam etching, Hard material
PDF Full Text Request
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