Fabrication And Photoelectric Properties Of Ultraviolet Photodetector Based On Wide Band-Gap Oxide Materials

Ultraviolet?UV?photodetectors play a very important role in our daily lives and are widely used in aerospace,military,communications,and environmental protection.Conventional UV photodetector materials include silicon,gallium arsenide,indium phosphide,etc.However,due to the disadvantage of small bandgap of these materials and the low operating temperature,the application of the photodetector based on these materials is limited.In recent years,the development of new wide bandgap UV photoelectric materials make it possible tofabricate the high-power photodetectors which can resist high temperature and strong radiation.Now there are two main research directions of UV photodetector: First,improve uponmanufacturing approaches and photoelectric properties of existing wide bandgap UV photoelectric materials;Second,discover new wide bandgap materials andexplore their application in UV photodetection.The main work of this paper includes two aspects: one is Ga₂O₃ nanowiresUV photodetector,the other is?LaAlO₃?_0.3-(SrAl_0.5Ta_0.5O)3)_0.7?LSAT?-based UV photodetector.In Ga₂O₃ nanowiresUV photodetector,Au particles-coated Si/SiO2 wafer is prepared with the method of spin-coating gold sol,in order to reduce energy waste and improve the preparation efficiency.In view of indispensible promoting role of Au particles in the growth of Ga₂O₃ nanowires and finally vanished gold particles on the top of nanowires,We suggest that Ga₂O₃ nanowire growth in our experiments is govend by a vapor-liquid-solid and vapor-solid combined growth mode.Based on the high quality Ga₂O₃ nanowire,we fabricated the interdigitated electrodes on the Ga₂O₃ nanowire network and studied its photoelectric properties.The photodetector has high sensitivity,low noise and fast response time,predicting a promising application of Ga₂O₃ nanowires in solar-blind UV photodetection.In the second work,LSAT-based UV photodetectorwas prepared by microfabrication technology.We conducted a series of photoelectric measurements on the detector.The experimental results show that the detector has solar-blind and ultrafast time response characteristics.In addition,multiple cells connected in parallelwere used to improve the photoelectric performance.