Thermal Stability And Photo Sensitivity Of Hybrid Semiconductor CdI₂?AD? Under High Pressure

The initial purpose to design organic/inorganic hybrid semiconductor is to combine the advantages of both two groups,to obtain hybrid semiconducting photoelectric devices with good integrated performance.Although great progress has been made in organic/inorganic hybrid semiconducting photoelectric devices,it is still far from people's expectation:In most of the case,either organic/inorganic hybrid semiconducting photovolatics,or field effect devices and transducers,the electrical performance are only between the two parts,furthermore,practical investigation and application of most organic/inorganic hybrid semiconducting are blocked due to their poor stability.The fundamental cause lies in the existence of large amount of organic/inorganic interfaces and grain-grain interfaces?grain boundary?,these interfaces may impede the transport of carries,resulting in poor performance of hybrid semiconducting materials and devices.In order to improve the stability of organic/inorganic hybrid semiconductor and explore new methods in growing organic/inorganic hybrid semiconductor crystals,we chose organic/inorganic hybrid semiconductor CdI₂?AD?as our subject and systematically investigated the development of its phase structure and micro morphology while being heated under high pressure,as well as the crystal growth process.Furthermore,the photoconductivity of samples under light illumination and its main influence factors were also studied.The results are as follows:1.The organic/inorganic hybrid semiconductor CdI₂?AD?was successfully synthesized in reference to related reports,and its crystal structure was revealed.2.The structure stability and development of the morphology of hybrid semiconductor CdI₂?AD?under high pressure were systematically investigated.We found that in the presence of high pressure,the stability of hybrid semiconductor improved a lot.What's more,the diffusion between different microcrystalline grains and the crystal growth process were both accelerated,thus large size and high crystallinity grains formed sheet were obtained.3.A series of experiments were undertaken to study the photo-response properties of CdI₂?AD?,its main influence factors were analyzed.We found that the high-pressure annealing temperature has a great effect on the grain size and crystallinity of the ceramic clip;In the process of photoconductivity measurements,the photocurrent through the clip surface increased along with increasing the excitation light power and wavelength?405?671 nm?.4.Particularly,we for the first time found "A visible light-assisted infrared sensitivity" in hybrid semiconductor CdI₂?AD?:The hybrid semiconductor which had no response to the infrared light finally showed evident response to the 1064 nm infrared light with the assistant excitation of 532 nm light.This work not only confirms that high pressure could improve the thermal stability of hybrid semiconductor,but also provides new ways for improving the morphology of polycrystalline ceramic clip or polycrystalline thin film and for crystal growth.