High-pressure Synthesis And Characterization Of ZnO Based Dilute Magnetic Semiconductors And ZrN Based Composites

High temperature and high pressure provide an extreme condition as a specialmeans of technology, which can change the atomic of electronic structure of theoutermost，and shortening the distance of the atoms effectively，thus changing thestructure of materials and chemical properties of elements，It was discovered that thisparticular means of high temperature and high pressure can fuse the elements whichcan’t be fused In atmospheric conditions to solid solution state, It can synthesizematerials that are synthesized difficultly under normal temperature and pressure，suchas cubic boron nitride, high temperature and high pressure，as a special syntheticmeans, play the important role of synthesis of new materials, revealing the law of theuniverse and researching new phenomena not only in the field of Earth Sciences, butalso in other fields of physics, chemistry, life sciences and materials science. Highpressure is not just an extreme conditions of synthesis, the pressure is also adescription of the thermodynamic parameters of states, high temperature and highpressure can change the phase and the structure of electron energy levels, reduce thechemical barrier of synthesis, increase solid solubility, produce new compounds orobserve new phenomenon that can not be observed at atmospheric pressure.In this paper we combine high temperature and high pressure to synthesize roomtemperature ferromagnetism of Mn-doped ZnO based diluted magneticsemiconductors under the conditions of5GPa and500degrees Celsius, and tosynthesize ZrN based composites under the conditions of10GPa,1600degreesCelsius, study the characterization of Mn-doped ZnO based diluted magneticsemiconductor and ZrN based composites.