Controlled Synthesis And Characterization Of ZnO Metal Oxide Semiconductor Material

This paper aims to use a new method for the synthesis of ZnO arrays,the patterned array device.It can be at 500 ? below the environment,synthesized within 10-20 minutes.At the same time using this method,can be obtained without any additional steps simple functional device package.A rapid synthesis of nano also studied with the method,which is simple,reproducible,safe,low-cost advantages of high efficiency,suitable for mass production.Controllable and performance of ZnO metal oxide semiconductor material grown on different substrates one-dimensional ZnO nanostructures simple and reliable method for the synthesis of Preparation realize ZnO nanodevices pipelined production.A width of 150 nm,length of 5um needle nanoribbons,we found that with the different modes,an array of different devices can be obtained at the same time;due to the different mode,you can get more options.In the manufacturing process,it does not introduce any impurities into the system,the occurrence of an autocatalytic process.Liquid phase transformation theory,the effects of reaction conditions on the reaction conditions,and by photoluminescence analysis system to study the effects of reaction conditions on the reaction conditions.Thus developed grown on different substrates rapid synthesis of one-dimensional ZnO nanostructures prepared.