Study On High Voltage Generator With Nanosecond Rise-time Based On Power Mosfets En Series And Parallel

Pulse generators with switching time of milliseconds, microseconds or even nanoseconds are widely used in various industrial fields and have a wide range of applications, such as electric permeability and drug injection therapy in the medical field, the food industry in the field of ultrasonic dust elimination and liquid food sterilization, the electronics industry in the field of laser tube-driven,high-speed photography control and the cathode ray tube scanning circuit and so on.With the development of industrial technology, the technical demands for these pulses generators are being put forward to higher requirements, they should be able to provide faster switching speed, increasing amplitude of the voltage pulse, higher and higher frequencies, lower load impedance and higher power efficiency. They must be able to provide a large instantaneous current or voltage pulse. In the past, the realization of these pulses generators require very expensive and complex circuitry.However with the development of modern power electronics technology, power MOSFET and avalanche transistor with higher performance, provide technical possibility to achieve the specific performance requirements for this type of pulse generator. After careful design, the use of these power MOSFET and avalanche transistors and other solid state switch devices can get a more simplified design structure, lower prices as well as nanosecond rise and kilovolts pulse voltage amplitude.This paper aims to design such a pulse generator with pure solid-state power electronic devices including power MOSFET and avalanche transistors. It should be said that to achieve such a sophisticate performance requirement, knowledge and understanding on the structure, feature and parameters of these solid-state devices should be in-depth and to its maximum extent. This paper first reviews the structure,analysis are made combined with high-voltage pulse generator technical requirements.Then the designed circuitry are proposed and tested by simulation and experimental tests, detailed study of the relationship between the circuit topology and switching waveform distortion are made, and analysis of the factors affecting the rising and falling edges of the waveform are made based on the switching waveform shocks and overshoot. The design requirement and performance are meet.