An Improved Circuit Model Of Flux-controlled Memristor And The Design Of MC Oscillation Circuit Based On It

The memristor is a new kind of nonlinear resistor with memory capability. As the fabrication of memristor still requires strict conditions, such devices can only be investigated in the laboratory environment and cannot enter the mass application step in the short term. It is thus of critical importance to design a memristor circuit model which can emulate the characteristics of practical memristor devices. Nonetheless, the established memristor circuit models still possess a number of disadvantages in the fields of design complexity, implementation difficulty, and simulation distortions, which actually has restricted the development of memristor based application research. Thus, developing a more accurate memristor circuit model will play an critical important role in improving current application research. The research work of this thesis mainly focuses on analyzing the shortcoming of established memristor circuit model, proposing a modified flux-controlled memristor circuit model and implementing the design in the PCB hardware level. Moreover, this dissertation develops a MC oscillation circuit and employ this circuit to evaluate the performance of proposed memristor circuit model.Initially, this dissertation investigates the flux-controlled memristor circuit model. In specific, it reviews the established circuit model, summarizes the advantages and disadvantages, and analyses problems of established circuit model in the fields of working principles and circuit realizations. It is found that the initial state of the circuit and input bias is usually neglected during the calculation of the circuit magnetic flux. In addition, the calculated results exist some mistakes, which leads to the inaccuracy in the circuit design. The problem mainly lies on the design of integrating circuit. Based on the analysis and simulation of design principle of current flux-controlled memristor circuit model, it is found that the DC component is typically neglected by the integrating circuit, thus the flux information from integrating circuit cannot be restored effectively and the outer characteristics of the model are different from the theoretical memristor. The defect existed in the current model may cause incorrect conclusions when it is used in the application researches. Therefore, the disadvantages are analyzed and the defects are proved by simulations, which provides ideas and references for modifying memristor circuit models.Based on the analysis of defects of current flux-controlled memristor circuit model, two plans are proposed in the paper for improving the integrating circuit: the one based on analog circuit and the one based on digital circuit. After we prove the theoretical and practical feasibility, the plan which is based on digital circuit is selected. The hardware part is realized and the testing experiment is designed. The correctness of the proposed model is proved by comparing with the memristor theory.In the end, flux-controlled memristor based MC oscillation circuit is investigated. First, a kind of accurate memristance control circuit is designed, the feedback circuit is formed by utilizing comparator circuit, the complex steps for repeatedly reading and writing in traditional methods are avoided, so the efficiency and accuracy are improved. Secondly, a kind of MC oscillation circuit which improved the frequency modification accuracy of RC oscillation is designed. Such MC oscillation circuit can automatically adjust, thus it can realize programmed frequency control with high accuracy. Finally, the feasibility of the method is proved by simulations, the characteristics of the circuit are analyzed.