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The Study Of InP Three-dimensional Nano Structure Arrays Formation And Related Properties

Posted on:2016-01-27Degree:MasterType:Thesis
Country:ChinaCandidate:X Y ChaiFull Text:PDF
GTID:2348330503993171Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
In this thesis, the tunable electrochemical oscillations and its application are reported for the fabrication of three-dimensional regular nanoporous arrays. Based on the relationship between the electrochemical oscillations and the nano pores' node of the three-dimensional structure, the InP three-dimensional regular arrays is prepared. The defect in the InP three-dimensional regular arrays was designed and fabricated by disturbing the electrolyte during electrochemical etching processing. In order to remove the InP irregular porous structure on the top layer, a mask was used during electrochemical etching of InP, which was fabricated by two beams double exposure. The effects of the critical size and the period of the mask were analyzed for the morphology and cross section of the InP pores. The formation of the radial porous structure is researched during the electrochemical etching of InP, and that the pore wall was discussed by the theory of space charge layer.
Keywords/Search Tags:porous InP, 3D regular nano arrays, radial porous structure, two beams double exposure
PDF Full Text Request
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