Ordinary grating is a multi-level diffractive element and the presence of harmonics pollution problems, as using a monochromator and the high-order diffraction will be superimposed on the first order diffraction, the formation of higher-order diffraction interference. In order to avoid the influence of high-order diffraction of monochromatic performance of the monochromator, combined with existing process level and the level of practical application, on a bulk silicon trapezoidal reflecting single-order diffraction grating structure is studied, and to determine the basic parameters of grating structure.Sal601 e-beam resist was used due to its high sensitivity, the structure of thin silicon grating was fabricated by using large area fast e-beam direct write lithography and ICP plasma etching; The plasma activation technique was used to effectively improve the bonding area in the bonding process with low temperature Au-Au diffusion bonding process;At a low bonding temperature(260?) and a low pressure(3.9MPa)conditions, to achieve a thin silicon substrate grating pattern and thicker bulk silicon by low Au-Au diffusion bonding process; The 1000 lp/mm and 2000 lp/mm trapezoidal single-order reflection diffraction gratings were fabricated successfully. Finally, the quality of the bonding samples was detected by supersonic scanning microscope(SAM).A synchrotron radiation light source is used to calibrate the 2000 lp/mm trapezoidal single-order reflection diffraction grating at different wavelength and grazing incidence angle in X- ray region, the ordinary reflection grating with 2000 lp/mm was compared.From the test results point of view, The absolute diffraction efficiency very close to the theoretical value, and the diffraction efficiency and the other spectroscopic properties are ideal. |