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Research Hetero-Epitaxial Growth Of Rubrene Films And Nature

Posted on:2017-03-15Degree:MasterType:Thesis
Country:ChinaCandidate:H DuFull Text:PDF
GTID:2348330503493155Subject:Physical Electronics
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The organic thin film transistor?Organic Thin-Film Transistors, OTFT?, which is also known as organic field effect transistor, is a kind of organic electronic device developed rapidly in recent years. It has many advantages compared to the traditional inorganic field effect transistor?FET?, such as small size, high density, high resolution, ease of integration,and so on. And it has been widely used to the field of organic solar cells, organic light-emitting diodes, organic sensors, etc.In this paper, we choose a heavily doped n-type silicon as substrate, choose SiO2 as insulating layer, select ?-four thiophene??-4T? thin film device with superior performance,then a layer of rubrene thin film is grown on its surface using a vacuum deposition method.Analysis indicating that rubrene film having a highly ordered morphology and crystalline structure. Rubrene film and ?-4T islands based on silicon dioxide?SiO2? crystal form the perfect heterostructures. This high-quality film formed at room temperature based on the carrier mobility of 2.93×10-2 cm2/Vs, the threshold voltage of-17.64 V, the switch ratio of rubrene polycrystalline thin film transistor of 105, is promoted by two orders of magnitude compare to rubrene / SiO2 grown at room temperature. Therefore, it has great prospect to grow rubrenethe using ?-4T as inducing layer at a low temperature in the aspect of high performance flexible display.
Keywords/Search Tags:orgain thin film transistor, heterojunction film, rubrene
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