Design And Preparation Of GaAs/GaInP Strain-Compensated Superlattice

The effect of thickness and component of barrier and the number of wells on super lattice is investigated by simulation of Cross Light. The threshold current and slope efficiency of semiconductor laser which has super lattice as active region is discussed. The highest gain coefficiency and low threshold current and high slope efficiency can be obtained by appropriate thickness and component of barrier, as well as the strain compensation. Experiments of growth of GaIn P and In GaAs materials are done. The effect of deviation angle of substrate and growth temperature on the order degree of GaIn P is investigated, and the dissimilarity between theory calculation and actural In GaAs material is discussed.Besides, the output performance of semiconductor is analyzed, and a new structure of “Reversed-Graded Index Waveguide Layer”(RGRIN) is proposed for980 nm semiconductor laser. By investigating the effect of thickness and component of RGRIN layer, the near-field optical field can be expanded without decrease of confinement factor, so the structure with low threshold current and small vertical far-field divergence angle is achieved.