Study On The Quantum Transport Properties Of MgZnO/ZnO Heterostructures

ZnO as wide band-gap semiconductor has drawn a great deal of interest and haven very significant potentialin device applications because of their excellent electrical and optical properties. The main contents of this thesis is to investigatequantum transport properties of 2DEG in MgZnO/ZnOheterostructure by soving the Poisson and Schr?dinger equation self-consistently.The main contents are organized as the following:By soving the Poisson and Schr?dingerequation self-consistently, we obtain the sub-band energy levers, corresponding wavefunctions and electron density of 2DEG, which are comprehensive and precise.Base on of the wavefuntion, We illustrated the general process of electronscattering calculation and given some major scattering, including the interface roughness scattering,polar optical phonon scattering, dislocation scattering,piezoelectricity scattering, deformation potential scattering et al. And the 2DEG mobility is obtainedby the Matheissen's rule. Results show that the MgZnO barrier layer thickness is one of the key factors influencing the concentration of two-dimensional electron gaspalying a significant role.The temperature characteristic of 2DEG mobility including multi-subband is studied in the MgZnO/ZnO heterostructure.It can improve of the precision of the calculations consideringnot only the two-dimensional sub-band scattering in the samevalley, but also the scattering of the same sub-band between the different valleys. Results show that the electronmobility of high sub-band will be the main factor limiting the 2DEG mobility, as the temperature increases.The research results can provide some theoretical references for designing optoelectronic and microelectronic devices with high quality and performance.