| In recent years, high-speed wireless communication system tends to get higher band, higher integration and lower cost. Millimeter-wave technology is used widely in our everyday life,the design of millimeter-wave communication system has become a hot topic. At the same time, however, this technology still has a lot of questions need to be solved.Nowadays, there are two ways to produce mm-wave signal: the first techn ology is based on optics and the second technology based on electronic. What's more, the electrical method still has two directions: the first method based o n compound semiconductors; second, the method depends on standard silicon s ubstrate CMOS process. Compared with traditional optics mm-wave technology,the method mentioned in this paper has many advantages, such as high integr ation level, less require towards the process, low cost, the possibility of on-chi p system, and break through the limit of maximum oscillation frequency.This paper presents a mm-wave Oscillator With Frequency Selective Negative Resistance(FSNR) Tank Based on CMOS 65 nm process. Firstly, this paper confirms a unique characteristic with a frequency selective feature. This FSNR tank not only generates negative resistance beyond its resonance frequency, but also further pushes it higher by lowering the overall tank inductance. Integrate the FSNR tank and the conventional cross coupled pair to construct a mm-wave oscillator. Through simulation based on CMOS 65 nm process, the oscillator can operate at a fundamental frequency of about 146 GHz with-25.77 d Bm output power. This frequency closes to the CMOS device cutoff frequency of MOSFET. Secondly, this paper focuses on the research on the effect to the Performance of the oscillator with different inductors, MOSFET and VDD and draws the corresponding conclusions. It is important to better understand the high fundamental frequency mm-wave oscillator. Finally, the results of this study provided some further optimization scheme. |
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