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Research And Fabrication Of Antimony Gallium/Gallium-indium-arsenic-antimony The Photovoltaic Cells

Posted on:2018-09-30Degree:MasterType:Thesis
Country:ChinaCandidate:B GuoFull Text:PDF
GTID:2322330536468443Subject:Integrated circuit engineering
Abstract/Summary:PDF Full Text Request
With the rapid development of new energy equipment,thermal photovoltaic cells were paid more attention and standed by more and more researchers because of its unique advantages.Compared with the single pyrolytic gallium material produced by the thermal photovoltaic cells,on the basis of this increase in the use of gallium indium arsenic antimony material.Since the quaternary compound had two independent component variables,the parameters such as lattice constant and dielectric constant of the semiconductor can be flexibly adjusted to optimize the performance of the battery.In all the structures of the battery,since the electrodes connected the device and the external circuit,it occupied a very important position,and the electrode had only high performance with the battery to achieve ohmic contact.However,since the antimony gallium material itself had a Fermi level pinning effect,making the electrode and antimony gallium itself difficult to achieve ohmic contact,limiting the performance of the battery.In this regard,this article cleverly proposed a series of measures to reduce the negative effects of this effect,that was,the use of heavy doping,sulfur passivation,electrode material selection and rapid thermal annealing and other measures to promote the electrode and the battery to achieve ohmic contact,Thereby,enhancing the performance of the electrode.This article did not start with the beginning of the theme of the use of this process was to make electrodes,but to verify the effectiveness of these measures,the introduction of the "contact resistance" concept,and measured its specific value requires a test model,"Dotted transmission line model".Then,The pattern of the model was tested on the surface of the gallium antimonide material using a series of processes.The results of the test showed that the P-type gallium antimonide electrode has a very low specific contact resistance and near-perfect I-V curve,while the N-site antimony gallium electrode was poor,the reason was that the Fermi level pinning effect on the same material,but different types of doping areas of the negative have impacts of different degrees.on that.With the inspiration of this experiment,this paper finally produced the electrode of the thermocouple battery and tested the performance of the battery to achieve the desired effect.
Keywords/Search Tags:ohmic contact, electrode material, Fermi level pinning effect
PDF Full Text Request
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