Study On Preparation Of CIS Thin Film Solar Cells By Electrodeposition

With the development of society and the progress of the times,human demand for energy is getting higher and higher.The traditional non-renewable energy due to the limitations of exploitation and environmental friendliness,making the human development and use of new energy more urgent.Solar energy as a representative of the new clean energy,more and more gets countries all over the world and its research institutions attention.Among the various types of solar cells,Cu In S2(CIS)has attracted much attention because of its high band gap width and solar spectrum matching,high light absorption coefficient,no photochromic phenomenon and low material preparation cost.In this paper,the method of constant potential electrodeposition was carried out by using deionized water solution and dimethyl sulfoxide solution as the electrolyte system.The prepared films were subjected to vulcanization annealing.Study the influence on the composition,element composition,surface morphology,photoelectric properties the CIS film by changing the different experimental conditions,such as electrolyte concentration,annealing conditions,deposition potential and substrate materials.The effects of water bath temperature,deposition time,deposition potential and p H value of electrolyte on Zn S were studied by chemical bath deposition method and electrodeposition method.The properties of the films were characterized by X-ray diffraction,scanning electron microscopy,energy dispersive spectrometer and four-probe instrument.Finally,try to make CIS solar prototype battery.Study the experimental conditions in the preparation of the battery on the battery performance and analysis of the reasons through the test of battery performance.The main results were as follows:(1)using one-step electrodeposition method by optimizing the different process parameters:Cu / In concentration ratio,sodium thiosulfate concentration,sodium citrate concentration in the electrolyte.annealing temperature,annealing time,heating rate in annealing conditions.deposition potential and different substrates.To obtain a good crystallinity,surface smooth CIS film.The band gap of the CIS film is 1.56 e V,and its conductive type is P-type.(2)Select the appropriate deposition potential in the dimethyl sulfoxide electrolyte.After annealing,the CIS film can be prepared by electrodeposition.The band gap of the CIS film is 1.58 e V,and its conductive type is P-type.(3)The surface morphology of Zn S film prepared by optimizing the water bath temperature and deposition time is fit,but it exhibits amorphous state.The surface morphology of Zn S film prepared by electrodeposition is smooth and the crystallinity is high.(4)Solar composite devices with Mo / CIS / Zn S / i-Zn O / n-Zn O / Al were prepared on the basis of CIS thin films prepared by one-step electrodeposition method and Zn S thin films prepared by chemical bath deposition method and electrodeposition method.The battery initially has the characteristics of a solar cell.