Simulation And Fabrication Of N-doped Perovskite Solar Cells

Organic-inorganic solar cells have been profoundly attracted great attention due to their advantages to its ease of processing,low cost materials and manufacturing,superb light-harvesting characteristics,and relatively high efficiency which make it more suitable over other emerging solar cell materials landscape.The organic-inorganic hybrid perovskite materials have recently shown great potential application in solar cells.They have amazed with an incredibly fast efficiency improvement,going from just 3.8% in 2009 to over 22.1% in 2016 of photoelectric conversion efficiency(PCE)leading them into a candidate for future photovoltaic applications.Although,the perovskite solar cells have developed very well,there exist many obstacles and issues that need to be solved.In these problems,the most important is the method of improving photoelectric conversion efficiency,which is the most worthy to pay attention.In this perspective,we aim to further improve the conversion efficiency.Since,doping in semiconductors directly change many electronic properties,such as charge recombination rate,carrier diffusion length,open circuit voltage(Voc),interface energy barrier,and contact resistance.Thus,there is a drive to use doping concentration such as n-type doping based perovskites.In order to improve the performance of n-doped based perovskite solar cells,a numerical simulation was done.A device simulator,the wx AMPS was used to solve the Poisson,hole and electron continuity equations in order to obtain information concerning the device properties of the n-doped based perovskite(MAPbI3)solar cells.Based on the work reproduced,we developed a new configuration with an increased donor doping concentration density of the absorber layer which showed an increase in efficiency over 20%.Experimentally,a simple one step method was used to produce efficient planar heterojunction organic lead halide perovskite solar cells,whereas addition of non-polar aprotic solvent(NPAS)greatly improved morphology and resulted in dense and uniform films,with highest efficiency of 17.85%.This work presents the development and design by exploring the possibilities of numerical simulation as a tool to improve the performance of n-doped perovskite solar cells.Also,It focused on studies of high performance of MAPbI3 based PSCs as a function of the efficiency factor by fabricating a n-type doped perovskite,and process optimization.Surprisingly,our novel designs indicate that it is indeed possible to achieve efficiencies and fill factors greater than 17.85% and 70%,respectively.Therefore further development in the performance of perovskite PV devices should focus in the achievement of higher n-type doping.