Fabrication And Study On The Electrical Properties Of 2D Black Phosphorus Device

Black phosphorus has unique photoelectric properties and combines excellent mobility and switching characteristics,it has wide application prospect in nano optoelectronic devices.In order to explore the photoelectric properties of twodimensional black phosphorus crystals,this paper mainly studies the preparation and electrical characteristics of two-dimensional black phosphorus crystal devices with different conditions and different structures.The main research work is as follows.In this paper,the transfer method of thin layer of black phosphorus crystal was explored.The PMMA-based wet transfer technique was developed to avoid the doping of the two-dimensional materials.And the PDMS-based dry transfer technology to protect the black phosphorus crystals degradation caused by water and oxygen adsorption.The factors influencing the electrical properties of the black phosphorus field effect transistor were studied and the dependence of the electrical characteristics of the black phosphorus device was studied and tested by different devices.The electrical characteristics of the black phosphorus hetero-junction devices were studied.The electrical characteristics of the three devices integrated on the same device were analyzed by the black phosphorus field effect transistor,molybdenum diselenide field effect transistor and hetero-junction device.The influence of the material transfer order on the electrical properties of hetero-junction is discussed.This paper study the role of air in the black phosphorus device and solve the degradation of black phosphorus caused by air adsorption,and it has deep significance in the black phosphorus device instability.