Photocurrent Response Of Si 2-D Nanostructure With Weak SiC Decoration

In recent years,nano silicon materials because of its unique optical and electrical properties,caused wide attention in the field of basic research or application research.Currently,using such as sol-gel method,chemical vapor deposition method,etching method to prepare nano silicon can exist in air steadily,its surface mostly act as oxygen terminal nanostructures.As a result of the silicon oxide layer have no electrical conductivity,resulting in a decline in conductivity of nano silicon or no electrical conductivity,limiting the application of nano silicon materials.This experiment adopts dc arc discharge method use industrial silicon block and methane as the source of silicon and carbon source to synthesize the compounds of silicon and small amounts of silicon carbide powder,discuss the carbon source,reaction temperature,discharge time on the influence of the synthetic product morphology.The research results show that the atmosphere in the dc arc plasma type and partial pressure ratio,can be directly used in the regulation of nano Si crystal structure and morphology.This paper provides a way to use doping gas method to prepare of nano silicon and improves the performance of the nano size of silicon materials and precisely control at the same time,to realize the scale preparation of nano silicon doping;This experiment in the process of synthesis of nano silicon controlled element doped in situ,improve the electrical conductivity and optical response performance of nano silicon materials,use the doped nano silicon as electrode materials of light assemble into a super capacitor and testing nano silicon light response performance.Firstly,use the automatic control dc arc nano powder production equipment inject with a mixture of hydrogen,inert gas and gas containing doping elements atmosphere,with tungsten electrodes are arc cathode,silicon block for arc anode,arc evaporate silicon material,on the basis of in situ preparation for a doping nano silicon materials.The invention of the rich raw material sources,simple preparation process,can scale preparation;Product environmental friendly non-polluting,novel structure;The addition of doping elements,improve the structure of nano silicon photoelectric properties.We mainly finished the previous preparation of nanomaterials and its structure,composition,properties and characterization of photo response performance,test methods including XRD,TEM,FTIR,XPS,Raman diffraction and electrochemical workstation.The results show that after mixing carbon silicon light will move in the direction of wide spectral response range,obviously increase the photocurrent.after calculating,Si and Si-C-100 nm in the liquid state organic electrolyte,their response to ultraviolet light current are 0.072 、 0.037mAg^-1 respectively.,the visible light response current are 0.0056 、 0.0089mAg^-1 respectively,the monochromatic light response current are 0.0062、0.013 mAg^-1 respectively,under the full spectrum,Si and Si-C-100 light response of current are 0.078 、0.034mAg^-1 respectively.Therefore Si photoelectric response capacity to uv light is strongest,that small size 2D structure is helpful to improve the efficiency of the photoelectric response of Si.