Researching The Preparation And Properties Of Graphene-ZnO Thin Films

With a unique two-dimensional structure and excellent electrical optical properties of a new nano-carbon material,graphene has a series of properties,such as high resistivity,high transparency in visible areas,mechanical stability,chemical stability,thermal stability,smooth surface.Graphene as a thin film material has application value in solar cell,display,sensors,antistatic coating and other fields.As a direct wide bandgap optoelectronic semiconductor material,ZnO has many excellent features and advantages in optoelectronic devices.The preparation of the graphene-Zn O film with two excellent materials is expected to further improve its photoelectrical properties.In this paper,graphene-ZnO thin films were successfully prepared by AACVD method.Al,N,Al-N,F and Al-F were successfully doped in graphene-ZnO films,labelling as Al-R-ZnO,N-R-ZnO,Al-N-R-ZnO,F-R-ZnO and Al-F-R-ZnO,respectively.We draw conclusions by X-ray diffraction analysis,infrared spectroscopy,ultraviolet-visible spectroscopy,atomic force microscopy,Raman spectroscopy and other test methods.The results show that the resistivity of graphene-ZnO films prepared in 30 ml zinc source precursor fluid conditions is the smallest.When the zinc source is 10 ml or 20 ml,the graphene-ZnO film quality factor is larger,and the photoelectric performance is better.After the combination of graphene and zinc oxide,the electrical properties of the film are improved.This is because that the method of preparing graphene film by oxidative reduction can’t be completely restored and has defects.Therefore,the existence of oxygen-containing functional groups on the graphene films prepared by this method hinders the electron transport and affects the electrical properties of graphene films.ZnO bonding with oxygen-containing functional groups on the graphene film by AACVD method is advantageous to the electronic transport and reduced sheet resistance,improving the electrical properties of graphene-ZnO films.The properties of Al-R-ZnO,N-R-ZnO,Al-N-R-ZnO,F-R-ZnO and Al-F-R-ZnO thin films are different depending on the type of dopant elements.Al-R-Zn O,Al-N-R-ZnO,Al-N-R-ZnO,Al-F-R-ZnO and Al-F-R-ZnO films have been improved after doping.Especially,The single-doped thin film is better than the double-doped thin film in electrical properties.And Al-R-ZnO films have a minimum resistance of 0.9 KΩ/square.