Effect Of Annealed Temperature On ZnO Thin Films Grown By Magnetic Sputtering And The Study Of Their Properties

ZnO is a direct gap semiconductor, has a hexagonal wurtzite structure. It is wide band-gap and has a large excitation binding energy, has the characteristics of high temperature resistance, excellent chemical satiability. ZnO film has good photoelectric,piezoelectric and other characteristics, the growth temperature is low, wide raw material sources, and the price is low. Because of these advantages, it has become the focus of semiconductor materials research in recent years. It has be widely used in the fields of solar cell, transparent electrode, LED display and other applications. Applications are very bright in the future. The method of producing ZnO thin film is mainly divided into two categories:chemical and physical. The main methods are Sol-gel method, CVD, Molecular Beam Epitaxy, Pulsed Laser Deposition, magnetron sputtering and so on.This paper adopts radio multi-sample co-sputtering new frequency magnetron sputtering to prepare ZnO thin films on substrate made by single crystal silicon and then annealed, it study the influences of different annealed temperatures to ZnO thin films morphology, crystallization an shine. The results of the study are as follows:First, deposition of ZnO thin films by radio frequency magnetron sputtering, choose(111) single crystal silicon(Si) as a substrate, the growth chamber on the back bottom vacuum for 5 x 10-5pa, sputtering pressure is 2 pa, substrate temperature 300?,the flows of argon and oxygen are 20 sccm and 10 sccm, the sputtering power is 75 W, the target distance is ~ 80 mm, the growth time is 60 minutes. And then, in the air atmosphere and the atmospheric pressure, ZnO thin films were annealed at temperatures of300?,400?,500?,600? and 700? for 120 minutes respectively?Second, using atomic force microscopy represents the surface morphology of ZnO films,the sample's characterization analysis represented by the of atomic force microscope morphology shows when the annealed temperature is 500 ?, the depositional ZnO films is the most smooth, film formation is uniform and compact, the surface's roughness is small.Use X-ray diffraction(XRD) to characteristic analyze the crystallographic characterization of ZnO films, and the contrast analysis shows that with the increase of annealed temperatures, ZnO(002)'s diffraction peak shift to high angle direction, and the half-width is gradually reduced, and after annealing treatment at 500? and 700?, the ZnO film has better crystal properties. We also test the photoluminescence spectra of ZnO films, we can see from the spectra that photoluminescence peaks of ZnO films near 400 nm is disappeared after annealed, UV emission intensity changed slightly, yellow and green emission in the visible region intensity was obviously restrained. The UV visible light emission ratio of Zinc Oxide films was maximum after annealing treatment at 600?.Third, by this study we can know that ZnO film has better surface morphology and better crystallization and luminescent properties after annealing treatment at 500? in the air.The research work for the subsequent ZnO film and alloy material growth and light emitting devices for the preparation of the basis of the preliminary work, it can provide a reference for other oxide thin film heat treatment.