Study On The Electrical And Optical Properties Of Mn-Co-Ni-Mg-Al-O Thin Films Prepared By Magnetron Sputtering

The Mn，Co，Ni based spinel transition of metal oxide(AB2O4)is a kind of negative temperature coefficient of heat sensitive materials,it has high temperature resistance(TCR),good ageing resistance performance,wide working temperature range and spectral response,can the advantages of long-term,stable work,it has been widely applied in the bolometer,non-cooled infrared detector,temperature on the meter and other precision measuring instruments.in recent years,in order to adapt to the use of the device under extreme conditions,so it have the higher requirements for the accuracy and sensitivity of the device,and the sustainable development of no pollution in the process of material preparation,Low energy consumption puts forward higher requirements,and the integration of devices puts forward new requirements for the size of devices.Therefore,compared with traditional devices,thin film devices with higher sensitivity and smaller size have become the research focus of Mn-Co-Ni-O thin film devices gradually.(1)Preparaed the Mn-Co-Ni-Mg-Al-O films by RF magnetron sputteringSeires Mn-Co-Ni-Mg-Al-0 thin film was prepared by RF magnetron sputtering method under different growth temperature,the XRD,XPS and other methods are used to investigated the series thin film,which prepared under different growth temperature find out the best growth temperature,in order to the provides a meaningful reference for materials preparation device miniaturization.XRD results show that at 100 ℃ and 150 ℃(311)orientation of deposition of thin film,at 200 ℃and 250 ℃ deposition of spinel NTC film appeared in the diffraction peak of(400)orientation.With the appearance of diffraction peak(400),the film thermal constant(B value)increases from 2000 K to 4000 K.Through the XPS analysis of series film,found the main base ions in thin film for Mn ions,Co ion in thin film material is +2,on this basis,combining with the ion placeholder rules of spinel structure,calculate the components of each film,found that when film sputtering growth temperature to 200 ℃,the Mg2+ began to tend to occupy the octahedral position of spinel structure.The results show that the electrical properties of Mn-Co-Ni-Mg-Al-O films are closely related to the growth orientation and cation distribution.(2)prepare Mn-Co-Ni-Mg-Al-O films under different annealing atmosphereSputtering Mn-Co-Ni-Mg-Al-O thin film by DC magnetron sputtering method and the alloy target was used,To studied oxygen defects affect the performance of thin film,the thin film was annealed at different atmosphere,in order to explore the oxygen in the thin film on the film performance,we specially adopt alloy target,which the oxygen is no included,to sputtering thin film.sputtering the films at different annealing atmosphere of oxygen vacancy in thin film was studied.The effect of oxygen vacancy on the film structure and electrical properties was studied.(3)Optical properties of Mn-Co-Ni-Mg-Al-0 filmsThe ellipsometry spectra of a series of samples were obtained by measuring the Mn-Co-Ni-Mg-Al-0 films prepared with different growth temperatures.The optical coefficients of the thin films in the range of near infrared and visible light were obtained by instrument fitting,and the series of thin films were compared and analyzed.