Study On Preparation Technology Of Fe₃Si Film Thickness By Sputtering Film Thickness

The Fe3 Si thin films prepared by magnetron sputtering and vacuum annealing method and to explore the sputtered film thickness of Fe3 Si film preparation process, by changing the sputtering film thickness and heat treatment process parameters to study the Fe3 Si formation and crystal structure and microstructure of the effect of form of Fe3 Si film best sputtering film thickness.Study design the two schemes, the first scheme, first in the silicon substrate deposited thickness of the Fe film and heat treatment; the second scheme, first silicon films deposited on silicon substrates, and iron deposition film; then in the vacuum annealing furnace for the were heat treatment, using X-ray diffraction(XRD), and scanning electron microscopy(SEM) of samples were characterized crystal structure and micro structure characteristics, and according to the analysis of measurement results of sputtering film thickness of Fe3 Si film formation, crystal structure and microstructure of the impact. The main results obtained are as follows: 1. Deposited on Si(111) substrate 180nm-280 nm metal Fe film, annealing temperature of 600 ℃-900 ℃, annealing 15 h. Found that with the increase of annealing temperature, can be roughly divided into two stages: a) in the annealing temperature of 600 to 800 ℃, mainly is Fe0.9Si0.1 iron silicon compound; b) when the annealing temperature is higher than 800 ℃, appear beta-FeSi2 and FeSi mixed phase, and with annealing temperature continue to improve, all samples were only formed a FeSi2 and FeSi. 2. On the Si(111) substrate deposited film thickness is 240nm-640 nm Si in the film and Fe films(including Si and Fe in the film thickness ratio of about 3:1), 500 ℃and 900 ℃ for the annealing temperature, annealing time 2h analysis results are as follows:a)The reaction of Fe0.9Si0.1 400nm-640 nm thickness for the total in and, the other no silicon, Fe0.9Si0.1 as the film thickness increases, the results of the analysis can be roughly divided into three categories: a) in the annealing temperature of 500 ℃ and 600 ℃, with the total film thickness increase, in addition to the formation of the iron reaction changes;(b) annealing temperature of 700 ℃, the total film thickness at 240 nm and 320 nm sample appeared Fe0.9Si0.1 FeSi Fe3 Si film samples, with the total film thickness increase only silicide; c) in the annealing temperature of 800 ℃, the total film thickness 240 samples, iron and silicon single FeSi, as the film thickness increases, the iron silicon reaction results no other phase is generated.b) With the increase of temperature. The analysis results can be broadly divided into three categories: a) in the total film thickness is 240 nm samples. With the increase of annealing temperature, silicon iron reaction occurred dramatic changes, first is generating Fe0.9Si0.1, then change into FeSi and Fe3 Si, finally became all FeSi; b) in samples of total film thickness at 320 nm. With the increase of annealing temperature, the temperature in to 700 ℃, formation of iron silicon compounds for Fe0.9Si0.1, FeSi and Fe3 Si, formed at other temperatures are Fe0.9Si0.1; c) in the total film thickness 320nm-640 nm samples. With the increase of annealing temperature, only have to generate Fe0.9Si0.1. 3. Bilayer structure total film thickness 240nm-640 nm samples result analysis are as follows: the annealing conditions to generate particles embedded in the membrane, good crystalline particles, with a uniform particle size distribution, particle size large, the combination of XRD analysis result shows, total film thickness is 240 nm and 320 nm samples formed particles as Fe3 Si and FeSi compound.