Study On Characteristics Of Photon Localization On Transverse Disordered Waveguides

Photon localization is a physical phenomenon that light's propagation is limited certainly in a disorderly medium so that the light comes into the local states from the spread state.Since the photon localization phenomenon has many potential applications in photonic integration,optical switching,optical sensor,light capture,new information source design and information and communication,etc.,it attracts attention of many researchers.There are many methods for studying photon localization,such as plasma structure,photonic crystal structure,and microcrystalline suspension and so on,wherein the use of transverse disordered waveguide is a very effective method.In this paper,we will discuss in detail the process of generating Anderson localization in the transverse disordered waveguide structure and the relevant theoretical research methods:First of all,we adopt a kind of photonic crystal structure,which is longitudinally homogeneous and has a certain disorder transversely.The numerical model is iterative by using the fourth-order Runge-Kutta method,and the propagation characteristics of the Gaussian beam are obtained in a two-dimensional and two-dimensional transverse disordered waveguide structure.The influence of disorder degree on the phenomenon of photon localization is studied by comparing the results of light propagation under different disorder degrees.Secondly,the photon localization is studied by combining the optical Tamm state.We analyze M-DBR(Metal-distributed Bragg reflector)structure,R-DBR(Random-DBR)structure,and M-R-DBR(Metal-Random-DBR)structure in the two-dimensional waveguide.As a new interface mode,optical Tamm state has strong local effect on light.The field distribution,resonant wavelength,reflectance spectrum,dispersion characteristics,power distribution characteristics and far-field distribution characteristics of the structure are analyzed by FDTD.For the M-DBR structure,the process of forming an optical Tamm state(OTS)on the interface between the metal and the periodic structure is studied,and the strong restriction of light in the waveguide is preliminarily obtained.For the R-DBR structure,it is concluded that the random layer can cause the fluctuation of the reflection spectrum in DBR.For the M-R-DBR structure,the lateral localization effect of the specific wavelength light field caused by the co-action of Tamm et al and random layer is studied.Finally,the gain is introduced in the random layer of M-R-DBR structure(taking the Rhoda mine B dye as an example)mechanism.The potential excitation mode of the photon localization effect from the structure is studied by comparing the optical output mode of the two kinds of gain media.It is found that firstly,the photon localization of light in a two-dimensional horizontal disordered optical waveguide can increase the local area effect with the disorder degree.Secondly,light localization is also observed in the structure based on OTS.In particular,the study of M-R-DBR structure combined with the interaction of optical Tamm state and random scattering layer,has been obtained stronger localization in transverse.The results can be used for reference to the strong limit of photon and the formation of low threshold random laser.