Effect Of Hydrogen On Radiation Damage In 3DG110 Bipolar Junction Transistors Irradiated By 1 MeV Electrons

Bipolar junction transistor has excellent current drive capability, linearity, low noise and excellent matching characteristics, it is the basic unit of bipolar integrated circuit on the spacecraft and highly susceptible to the effects of space radiation environment. 3DG110 bipolar junction transistors caused by 1 Me V electrons is examined by electrical performance testing, deep level defect analysis(DLTS) and isothermal annealing, in order to study the effect of hydrogen on radiation damage and damage mechanism, and the effect of hydrogen on radiation damage in 3DG110 bipolar junction transistors irradiated by 1 Me V electrons was revealed.Radiation experimental results show that, with the increase of 1 Me V electrons fluence, the current gain of bipolar junction transistors gradual degraded. And, the base current increased with the increase of irradiation fluence, and the collector current decreased with the increase of irradiation fluence. Based on the DLTS results, 3DG110 transistors exposured to 1 Me V electrons can generate both displacement damage defects and ionization damage defects. Compared with the concentration of ionization damage defects, the concentration of the displacement damage defects is lower. Through the comprehensive comparative analysis of electrical properties and radiation damage defects before and after hydrogen treatment, H2 soaking can produce more ionizing radiation damage defects in the transistors, but has little effect on the displacement radiation damage defects, thus it exacerbate the formation of radiation-induced interface trap and oxide-trapped-charge buildup in the transistors, resulting in the radiation damage of transistors is more serious. Therefore, the damage of transistors with H2 soaking under the conditions of the electron irradiation is larger.Study on isothermal annealing find that, the annealing rate of bipolar junction transistors accelerates with increasing annealing temperature. But compared with the transistors with H2 soaking, the annealing rate of untreated transistors under 110℃ and 150℃ has not big difference. The test results found by DLTS, at the same annealing temperature, with increasing annealing time, the peak of oxide charge defect signal gradually decreases, the corresponding temperature coordinate gradually reduces; the peak of interface trap defect signal gradually has a slight increase, the corresponding temperature coordinate gradually increases; the peak and the temperature of displacement defect signal don’t change. Comparing the results of annealing treatment before irradiation with or without hydrogen, the ionization defect and electrical properties of the transistors with H2 soaking before irradiation has a faster annealing rate. Compared with the vacuum annealing, when annealing is performed under 110℃,hydrogen atmosphere could suppress the annealing of oxide charge and interface trap in the bipolar transistor; but, hydrogen atmosphere could promote the annealing of ionization defects in the bipolar junction transistors.