Research On Resistance Switching Properties In BaTiO₃ Film

This digitalization, informatization and intellectualization of the devices has widespread popularity. The memory has been very widely used in our production and living of the parties with the continuous development of times and technology. The storage role is more and more important to us. We become more and more high to the requirement of memory. This makes it to the pursuit of miniaturization, storage density higher, reading and writing faster, longer life and lower power consumption of memory. In order to get more excellent performance of new type of storage, many researchers are looking for a substitute for conventional memory. In the study, people found that many transition metal oxides, perovskite oxides and organic matter have resistance switching features, such as they are applied to the potential of nonvolatile resistance changing memory. The connotation of the reisitive switching is rich. The mechanism of resistance switching also have each different, and many mechanism is still not fully clear, even there is a lot of controversy.Barium titanate with high dielectric constant, good ferroelectric, piezoelectric and resistive sitching properties, are significant materials of perovskite structureand, which show a lot of attractive features. More and more people pay attention to it. It is widely use in the field of electronics, calorifics, photics semiconductor materials and non-voltatilememory. The thesis covers the following:BaTiO₃ thin film is deposited on Si substrate by RF magnetron sputtering system and its film characteristics are analysis by X-ray diffraction（XRD）, sanning electron microscopy（SEM）. The electrical property is checked by keithley 2400 or electrochemical analyzer. The devices show excellent switching devices, including the switch of high ratio, strong fatigue resistance and long memory characteristic. According to the electrical properties of I-V curve measured the devices, the resistance switching of the devices is bipolar and the application of oxygen vacancy capture and release model to explain the switch of bipolar resistance properties. In addition, structure ZnO/BaTiO₃/ZnO multilayer was fabricated on silicon（Si） substrate by RF magnetron sputtering system. The light-modulated resistive switching characteristics in ZnO/BaTiO₃/ZnO devices were observed. The light-modulated resistive switching shows good repeatability at room temperature.