The Researches Of Low Frequency Noise On PD-SOI Device

Semiconductor is the most important unit of all electronic equipment. It affects the performance of electronic equipment by quality and stability. With the development of aviation,aerospace and nuclear technology, more and more semiconductor devices need to work in high temperature and high ionizing radiation environment. Any defects in devices could cause economic losses, even personal safety of technician. In order to keep the devices work well in ionizing radiation environment, the methods to characterize the reliability and radiation resistance in semiconductors have become an important research aspect. The traditional methods are radiation and annealing. Also they are time-consuming and expensive. In addition, the performance of devices after annealing is not the same as before and may induce other latent defects. The noise is related to the inner defects, and therefore the study of low frequency noise will be helpful to determine the defects in semiconductor devices. Focused on SOI devices, the main research content of this thesis are as follows:1. The relationship between low frequency noise and reliability in semiconductor is introduced. Based on the mechanisms of low frequency noise, the relevant device parameters is extracted by mathematical calculations and analysis.2. Based on direct measurement method, the measuring systems is established with Agilent1500 as SMU unit, M9018 A as spectrum analyzer, and Aglilent 4725 A as filtering and amplification unit.3. Based on the partially depleted silicon-on-insulator(SOI) transistors, the densities of trapped charges in the front gate oxide and buried oxide are extracted. Due to the different manufacture processes, the extracted density of trapped charges in the buried oxide is larger than that in the gate oxide.Based on the charge tunneling mechanism, the spatial distribution of trapped charges in the gate oxide and buried oxide are extracted. In addition, the influence of channel length on the low frequency noise in SOI device is also discussed. The dependence of back gate voltage on the front gate threshold voltage, front channel current and front channel noise are investigated by considering the charge coupling effect.In summary, the low frequency noise in partially depleted structure SOI device is measured and analyzed. It is expected that these results will provide good supports of low frequency noise analysis for other semiconductor devices.