Study Of OTFT Based On Improvement Of Active And Dielectric Layer

After the advent of inorganic electronic devices, electronic devices based on the prospect of an organic semiconductor have come out as time goes on and more and more broad. Among them, there is a thin film transistor airport, referred to organic thin- film transistor（OTFT）, which has experienced years of investigation, the public gradually comes into sight, and now for the pursuit of one of the OTFT is further shortened response time to enhance its cost, many effort makes OTFT sensing aspects of environmental biotechnology and other fields have its uses.In this paper, the spin-coating method and vapor deposition on a silicon substrate prepared OTFT, studied P3 HT, TII（Na）₂ and TII（BFu）2 three different organic active layer and a dielectric layer material modification of the electrical properties of the device the impact of research and application in the O TFT sensing field. Different concentrations of the active layer material is doped preparation OTFT, discuss its electrical properties, surface morphology, cr ystal phase changes and mechanism. The comparative analysis of different modifications of the dielectric material layer OTFT, discuss its electrical properties, surface morphology, stability and detection range. The main results and conclusions are as follows:Novel small molecule material TII（Na）₂ and TII（BFu）2 has excellent optical and electrical properties, as the active layer of the OTFT can get 10-3 cm2 V-1 s-1 over the carrier mobility and more than 104 current switching ratio. In TII（BFu）2 incorporating different proportions of classic active layer material P3 HT found that when the P3 HT doping concentration of 20%, the electrical device to get the best performance, the carrier mobility of 1.83×10-2 cm2 V-1 s-1, switch ratio reaches high 104.4, and the crystallinity of the active layer and the surface roughness optimum conditions. In the pure P3 HT, TII（Na）₂ and TII（BFu）2 OTFTs, of which the dielectric layer are modified with PS, PMMA, PTS and OTS, respectively, to obtain different degrees of improved electrical properties, wherein the OTS- modified TII（BFu）2 OTFT has the best off ratio and stability, suitable for making application detection sensor aspect, which for Na+, K+, Mg2+ and Ca2+ current response obviously has a different, but also stepped detect 10-6 M to 10-2 M of Na+ concentration, the ion detector excellent results.