Design And Simulation Of RF MEMS Phase Shifter

RF MEMS has more advantages than traditional phase shifter, it has lower loss,broader band,micromation and easy integration with the IC and MMIC.Due to restricted materials, microelectronics technology and other basic industries, the current domestic rarely Ka-band RF MEMS phase shifter reports.This thesis introduces the technology MEMS and RF MEMS technology, and analyze of the market prospects for RF MEMS technology. Then a detailed introduction of RF MEMS switch which is the most important basic elements of RF MEMS phase shifter, focusing on the RF MEMS capacitive switch and RF MEMS contact switch, and simulation of.electromechanical properties and electromagnetic properties of RF MEMS contact switch is presented.On the basis of simulation and analysis of the previous section, the paper then introduced the principle of DMTL-type, reflective-type, switched-line-type and high-pass/low-pass-type phase shifters as well as domestic and foreign development works. Finally, it propose to design a DMTL-type phase shifter.A Ka-band 4-bit distributed MEMS transmission line phase shifter was presented in the paper, which is composed of 15 MEMS capacitive shunt switches, and MIM capacity is plated in MEMS switch.Design and simulation of the phase shifter is reported with, it achieves phase shifter from 0° to 180° steps 22.5° by controlling RF MEMS switches on and off.By varing the driving voltage to change the height of the MEMS bridge,the measured pull-in voltage of MEMS switch is 18.9V. Simulation results show that the insertion loss is higher than -2.2dB, and the return loss is lower than -25dB,with smaller than 1.5°phase shifter error at 31GHz.The function of phase shifter is good.