Electrical Properties Of Metal-Insulator-Metal/Semiconductor Structure

Electronic information storage occupies an increasingly large share in the market,showing its importance. Metal-insulator-metal(MIM) and metal-oxide-semiconductor(MOS) are the most used structures in electronic information storage. This paper studies the following research topics to promote the development of the electronic devices.1. The application of atomic force microscope(AFM) in electronic information storage.2. The reliability of two-dimensional dielectric in resistive random access memory(RRAM).3. The reason of current without bias of metal-oxide-semiconductor structure measured in the AFM.Research shows that the environmental chamber we created can effectively control the testing atmosphere, replace gas, reduce the relative humidity inside the chamber and improve the resolution of AFM, which has a positive influence in application in the electronic information technology. The introduction of a two-dimensional dielectric opens a new chapter for RRAM, the reliability of the two-dimensional boron nitride is much higher than that of hafnium oxide, and the breakdown process happens layer-by-layer. BN-based RRAM shows stable operation process. The Ti top electrode and boron have interaction and form the conductive filament. The fabrication of BN RRAM is very easy and compatible with the CMOS technology, which is better for the industrial production. During the research of the RRAM, we observe current without bias when measuring the metal-oxide-semiconductor samples with conductive atomic force microscope(CAFM). In fact, many researchers have found this behavior, but there is no accepted explanation for it. We tried to use different Si-based samples and various AFM and find out that the current is generated by the laser which is used to detect the deflection of the tip. The laser is on the cantilever, but it leaks to the sample surface. Si substrate is the most used material in electronic devices, which is an excellentlight-absorbing material, generating free electron-hole pairs. This phenomenon may be relevant for any photo-absorbing substrate with built-in field. Therefore, people should take it into account during the research.