Design Of A Compact Solid-state Power Amplifier At X Band

Compared with vacuum tube amplifiers, the solid state power amplifiers(SSPAs) have the advantages of high reliability, low operating voltage, etc. In recent years the SSPAs of each band(L, S, C and X bands) have already been widely used. In the missile- borne data transmission field, the SSPA is generally required to operate in Xband. In addition, to meet general electrical performance requirements such as output power, the amplifier’s weight, volume and heat dissipation ability are all of considerations. Therefore, the research of miniaturized SSPAs is very meaningful.Currently the transistor used for X-band SSPA is mainly GaAs FET. Starting from designing principles, a general design method of microwave SSPA is introduced; then the thesis states some design considerations.Based on the above condition, a type of X-band miniaturized SSPA is designed. The thermal analysis shows that the FET junction temperature is less than 150 degree after 10 min working. Finally, the SSPA gives an output power greater than 10 W in the frequency range of 9 ~ 9.5GHz, with the power added efficiency(PAE) greater than 25%.