| With the rapid development of mobile multimedia network, people are requiring an increasing wireless data rate for terminals. Now, communication technologies widely used in people’s daily lives have been unable to meet the needs for its frequency and bandwidth constraints. For millimeter wave 60 GHz band technology has wealth of untapped spectrum resources and a very high data rate over 1Gb/s, it has taken widely attention and becomes hotspot in recent years. Many countries have released its 60 GHz frequency band standard, and China has also launched the IEEE802.11aj(Q-LINKPAN) standard, which including 45 GHz and 60 GHz bands. As an essential element of communication system, the research of antenna for 45 GHz / 60 GHz became a focus.In the present research of millimeter-wave frequencies(45GHz and 60GHz) antenna, there are many problems to be resolved and the researches are mainly in two directions. One direction is the design of on-chip antenna based on silicon processing technology. This is due to the antenna at such high frequency can be made very small and make its integrating into the wireless transceiver chip possible. The next generation of millimeter-wave communication technology may be distributed more than one band and the current silicon-based millimeter wave antennas are most single band antennas. The study of dual-band on-chip antenna is still relatively lacking. The other direction is to develop a very high gain antenna based on PCB or LTCC technology. This is because 60 GHz is at the peak of atmospheric absorption and cannot transmit a long distance. Meanwhile, the current 60 GHz amplifier technology is difficult to achieve a relatively large power output. Thus to design a high gain antenna to improve the signal propagation distance is the simplest and most effective method. The current 60 GHz high-gain antennas usually have complex multi-layer structure, which make it not only difficult and expensive to manufacture but also inconvenient for practical application. Thus, this paper respectively explores these two directions and the main work are shown as follows:In the first part, four silicon-based antennas are designed and fabricated. The first two antennas are 45 GHz and 60 GHz single band antennas, which respectively are triangular and U-shaped configuration. Measured results show that their operating frequency bands separately cover 40-47 GHz and 57-64 GHz. And the measured peak-gain respectively achieves-5.5 dBi and-2.58 dBi. At the same time, the on-chip antenna measuring system is introduced in detail. The other two are dual-band on-chip antennas, whose operating frequency band covering the 45 GHz and 60 GHz bands. Simulated results shows that the two antennas separately have a gin up to 1.8dBi and 1.65 dBi at 45 GHz, 1.82 dBi and 2.64 dBi at 60GHz。In the second part, four 60 GHz high gain antennas are proposed basing on traditional PCB process. They are all single-layer substrate planar design and having no via, which makes the fabrication very easy and cost very low comparing with current reported multi-layer complex antenna. The first is a tapered slot end-fire antenna with side-lobe level suppressed. The side-lobe level is below-15 dB and the antenna maximum gain is 10.5dBi. The second antenna is a high gain antenna with reflecting parabola array of fan-shape units. The prototype of this antenna is a bow-tie dipole structure. By adding three configurations, a reflecting parabola array of fan-shape units, a symmetrical reflecting wing-like slot and "II" shape unit linear array, the final high-gain antenna is achieved. This antenna has a gain up to 10.9dBi. The third and fourth antennas are separated 4×4 and 8×8 microstrip antenna array. Their maximum gains are 18.85 d Bi and 20.9dBi, respectively. |
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