The Study On The Fabrication And Performance Of P-Type SnO Thin Film Transistor

At present, the rapid development of thin film transistor (Thin Film Transistor-TFT) promote the continuous development of electronic information industry, especially,metal-oxide semiconductor devices have made an impressive progress due to their high electrical performances and production for applications in display and flexible electronics.Metal oxide semiconductor device are widely used in flexible displays and electronicsbecause of its excellent electrical properties.However, most of metal-oxide semiconductors thin film transistors (TFTs) have been focused on the n-type devices, such as amorphous indium-gallium-zinc oxide (a-IGZO) TFTs and zinc tin oxide (ZTO) TFTs, only a limited number of p-type metal-oxide semiconductor were reported for TFTs, and their applications were limited on coating layers in electronic industry development. With the increasing development of electronic information industry, lagging development of p-type metal-oxide semiconductor TFTs restricted the development of p-n junction based devices, transparent electronic devices, flexible displays and other complementary fields.In recent years, SnO material, which havea high electrical mobility, have received more and more attention as one of good candidates used in p-type TFTs. In this part, this paper mainly studied how to prepare high-performance p-type SnO TFTs, the main work and achievements are as follows:(1 Successfully prepared high-performance p-type SnO TFTs by RF magnetron reactive sputtering.(2)Studied the effects of annealing process and the power of RF sputtering on the preparation of SnO film by analyzing the data of X-ray diffraction (XRD). The crystallinity of SnO film has improved significantly after annealing at 400 "C under vacuum for 1 hour.(3) Studied the effects of different metal electrodes and Shadow Mask preparation process on the electronic properties of SnO TFTs.(4) Studied the effects of different thickness of working layer on the electrical properties of p-type SnO thin film transistor.