Study On Low-temperature,High-mobility Metal Oxide Thin-film Transistors

Recently,thin-film transistor(TFT)has been intensively great researched due to the application in active matrix organic light emitting diode(AMOLED).The metal oxide thin film transistor(MOTFT)has been investigated due to the advantages of relatively high electron mobility,excellent uniformity,good transparency,and low process temperature.In order to realize flexible,large scale and ultra-high definition AMOLED back panels,it needs to decrease the processing temperature and improve the mobility of MOTFT.Therefore,it is important to research the low-temperature,high-mobility MOTFT.This paper from two aspects of device structure and the active layer material for the study of MOTFT.Firstly,the device structure of MOTFT was studied.The high mobility MOTFT based on IZO oxide semiconductor with double channel layers was fabricated.The MOTFT exhibited high mobility(>30 cm2V–1s–1)and good stability(?Von<1V).Secondly,the active layer material was also studied.The low-temperature,high-mobility scandium(Sc)incorporating In2O3(ScInO)as oxide semiconductor material was developed.The Sc InO TFT displayed an excellent electrical properites with a high mobility of 42.9 cm2V-1s-1.Moreover,the flexible ScInO TFT was fabricated on polyethylene naphthalate(PEN)substrate with the highest process temperature of only 150 ?.More interestingly,the transfer curves of the flexible ScInO TFT showed only a few changes under a curvature radius of larger than 20 mm.At last,in order to lower the fabrication cost,the MOTFT with solution-processed Sc InO thin film based on water-induced precursor was fabricated.In general,the precursor consists of organic solvents which are environmentally unfriendly,and the mobility of the traditionally solution-processed MOTFT is very low.The ScInO TFT based on water-induced precursor is environmental friendly.Moreover,the Sc InO TFT also exhibites high mobility and good stability.