Study Of The Characteristics Of Single-mode Surface Relief Structure Vertical Cavity Surface Emitting Lasers

The vertical-cavity surface-emitting laser(VCSEL) isa new type of semiconductor laser. Due to light emittion perpendicular to the substrate, easy integration in two-dimensional array, low threshold current, high efficiency, low divergence etc, it has been extensively used in optical communication, optical interconnection, optical information processing and high speed parallel mesh etc. Although its output power, conversion efficiency, reliability and transmission rate have been improved, the disadvantage of multi-transverse mode emission limits its applications in laser print, high speed optical communication, free space optical interconnection, laser ranging. For a typical oxide confined VCSEL, the device cannot achieve single-mode operation whenits aperture larger than 3.5-4μm, which limits output power. Surface relief structure is a method to achieve high power single mode VCSEL. Through etching a certain depth on the surface of upper Distributed Bragg reflector(DBR) of VCSEL, the loss of high order modes can be increased. Thus the single-mode can achieve through mode selection. A new structure VCSEL to achieve the single first-order transverse mode emission is presented in this paper. The advantages of the structure are its high power single mode lasing withlow far-field divergence.The main parts of the thesis are as follows:1 The structures and theories of VCSEL2 Design and simulation about a new surface relief structure VCSEL.3 Fabrication of the surface relief structure VCSEL, focusing onetching technology,oxidation technology and P-type electrode lift-off.4 Test and analysis of the single-mode surface relief structure VCSEL.