The Simulation Study And Performance Analysis Of SiC Diode

With the development of microelectronics technology, the traditional semiconductor material(Si) has been unable to meet the technical requirements of high-performance semiconductor devices. Therefore, it promoted the development of a wide belt tightening semiconductor materials and devices. However, the study of a silicon carbide(SiC) pn junction diode is generally at high temperature and voltage characteristic. It is lack of contrast between the diode of SiC allotrope and Si,as well as research and analysis for the practical application of reference data.The design of 4H-SiC pn diode as an example to establish the simulation model of p+n-n+ diode structure. The comparative analysis and parameter extraction of the three kinds of pn junction diode of 3C-SiC, 4H-SiC, 6H-SiC allotrope and Si material is to researching superiority of SiC devices. It shows that the current range of 300 K SiCpn junction diode forward characteristics of 10-14A~10-2A, the current range 10-6A ~10-3A at high temperatures 700 K, ideality factor ranges from 1 to 2. The current range of the Si diode diffusion region is only 10-3A~10-1A,operating in the temperature reaches 550 K,the diode characteristics has disappeared. The reverse breakdown voltage of 4H-SiC pn junction diode is affected by the thickness of the substrate, which can achieve to 700 V at 600 K,and the reverse leakage current is 1.2×10-11A/cm2. Our studies have shown that SiC semiconductor material of the device has superior performance, the institute parameters is significant for silicon carbide diodes to selecting a suitable diffusion region.