Preparation And Properties Of Anodes In Application Of Organic Light Emitting Devices

Organic light emitting device(OLED) is the new generation of flat panel display technology after plasma display technology and liquid crystal display technology, which has been paid great attention among the multidisciplinary scholars home and abroad due to several merits, such as selfluminous, high efficiency, ultra-thin, low power consumption, simple structure, fast response etc.. However, currently there are still some problems making OLED has not been large-scale spread, device efficiency, stability and short lifetime. Electrode material plays an important role in the current most widely used electrode materials for the application of OLEDs, which has more than 90% light transmittance, excellent electrical properties and so on. Since common organic materials generally have a high HOMO level, too high potential barrier between the anode and hall transfer organic layer to limit the efficiency of hole transport. Optimization or modification of electrodes is one of the important research point, this article will pay attention on the optimization of the ITO anodes.In this paper, ITO films are prepared by reactive RF magnetron sputtering at different substrate temperatures, oxygen partial pressure. And vanadium, chromium, manganese doped ITO films are studied by dual-target reactive sputtering. XRD, SEM, UV-VIS, four probes and other materials analysis techniques are used to study the change of crystal structure of ITO films, optical properties and electrical properties resulting from the temperature and partial pressure of oxygen and metal doping. The results showed that:(1) Changing the substrate temperature failed to impact the preferential growth orientation of the crystal ITO film. By analyzing the optical absorption data, it was found that the optical band gap increases with the increment of substrate temperature. Incensement of the oxygen partial pressure reduced the crystallinity of the ITO film, and the reduction of oxygen vacancies lead to conductive performance degradation.(2) After the vanadium, chromium, manganese doped ITO, the preferential growth orientation of ITO film keep on(222), but the(222) diffraction peak intensity has weakened, the surface roughness increases. At lower doping conditions, the optical transmittance of the ITO film still can reach more than 85%, the optical band gap has been significantly improved and the electrical properties of doped ITO comparable with that not doped.