Study On Improving Performance Of Organic Solar Cells And Organic Light Emitting Device Based On P Type Doping Layer

Organic optoelectronic devices has wide application prospect because of the advantagessuch as easy to get raw materials, low cost, selection of a wide range, simple fabrication process,high environmental stability, light weight and foldable etc. This paper is focused on researchorganic photovoltai（corganic photovoltaic,OPV）and organic light-emitting diodes （organic lightemitting diodes OLED） which has received the most attention in organic optoelectronicdevices.This paper uses MoO₃as a P-type dopant which was used to dope into pentacene as a p-typedoped anode buffer layer, the P-type doped organic optoelectronic devices with co-evaporationof pentacene and MoO₃（scale factor of4:1） is prepared to improve the performance of thedevice, and we made the following studies:First Pentacene is used as an anode buffer layer to improve the performance of the OPV. weprepared ITO/pentacene （x nm）/CuPc （（30-x） nm）/C₆₀（50nm）/Bphen （8nm）/Al （100nm）,when the the pentacene thickness is5nm, compared with no pentacene layer of the device, theefficiency increased from0.89%to1.02%, that is mainly due to excellent hole transport ofpentacene, and modify the anode, thereby improving the performance of the OPV. In order tofurther improve the performance of the device, we have introduce the mechanism of P-typedoping, MoO₃was used to dope into pentacene to improve the carrier transport ability andreduce the contact resistance of the interface between the anode and the organic layer, and theMoO₃-doped pentacene increases the hole density and improve the collection efficiency of thecharge because of the P type characteristics, therefore the performance of the OPV is improved.Compared to CuPc/C₆₀heterojunction OPV of molybdenum oxide as the buffer layer andpentacene as a buffer layer, the OPV of5nm MoO₃-doped pentacene as an anode buffer layerwas significantly improved in the open-circuit voltage, the energy conversion efficiency andshort-circuit current density. And the short circuit current density is6.62mA/cm2, the opencircuit voltage is0.413V, fill factor is0.527, the energy conversion efficiency is up to1.44%,respectively. The conversion efficiency is increased by41%compared with the device of pentacene as an anode modified layer.Then, the phosphorescent OLED device of pentacene as an anode buffer layer wasprepared,as follows: ITO/pentacene （x nm）/of NPB （（40-x） nm）/CBP （3nm）/CBP: Ir （ppy）₃（30nm）/Bphen （30nm）/LiF （0.8nm）/Al; among CBP: Ir （ppy）₃（8%）, x=0nm,1nm,3nm,10nm.When the thickness of pentacene is1nm, the performance of the device is the best, thecurrent efficiency is up to23.43cd/A and power efficiency is9.82lm/W. Then thephosphorescent OLED device of MoO₃-doped pentacene as an anode buffer layer was prepared,as follows: ITO/pentacene: MoO₃（x nm）/NPB （（40-x） nm）/CBP （3nm）/CBP: Ir （ppy）₃（30nm）/Bphen （30nm）/LiF （0.8nm）/Al; among CBP: Ir （ppy）₃（8%）, x=0nm,5nm,10nm,20nm. Bydoping MoO₃into pentacene as a buffer layer, the hole injection barrier reduces and improvesthe hole injection efficiency.Compared to the device of no the MoO₃-doped pentacene as abuffer layer, the turn-on voltage reduces, only is3.5V.When the drive voltage is about6V, thebrightness reaches1000cd/m2, when the voltage is10V, the highest brightness can reach about32460cd/m2. When the thickness of MoO₃-doped pentacene layer is5nm, the driving voltage is3.5V, the current efficiency of the device is30.66cd/A, the maximum power efficiency of27.52lm/W. The current efficiency is improved by about48%as compared to the device with no MoO₃incorporated pentacene buffer layer.