Studying On Synthesis And The Behaviour Of Phosphor Diffusion Source

Diffusion source is used for diffusion in the manufacturing of semiconductor device. Ion Implantation and diffusion are the two different methods for doping. With the different way to doping there are different doping source. Because of the simple operation for the diffusion technology, it is widely used. In this article we will introduce you the diffusion source which contains phosphorus.Phosphorus ox chloride is the most common diffusion source for doping. But because of the high toxic of the phosphorus ox chloride, it can pollute the environment and also be harmful for the health of the people. For all of these reasons, more and more people are thinking about a new product to instead it. So the phosphor silicate glass comes out. It is a new product for diffusing phosphorus. But it cannot control the impurity concentration very well.According to the method of manufacturing phosphorosilicate glass, a new type of liquid phosphorus latex is prepared. This source can be coating on the wafer. Then the coating on the wafer will be heat in a high temperature. So the phosphorus can be diffused in the wafer. In order to control the impurity concentration we just need to control the concentration of the phosphorus in the source.In this article we produce colloid SiO2 source by the Sol-gel processes of the tetraethoxysilane(TEOS). Then the phosphorus pentoxide is mixed in the source. So it can be coated on the wafer. Also the phosphorus can be diffused in the wafer in the high temperature. Then we studied the performance and structure of the source.