Research And Simulation Of Indium Gallium Zinc Oxide Semiconductor Material

First introduced more than ten years ago, indium gallium zinc oxide semiconductor still remains a debatable topic, especially about its conduction mechanism. But above all, one thing is agreed upon that the subgap density of states plays an important role in describing its electronic characteristics. As far as we know, most published works of indium gallium zinc oxide subgap density of states model have focused on either some specific parts of a model or the extraction of model parameters.In this work, we combined the most recognized models in research. And by way of computer aided modeling and simulation of materials and relating devices, we thoroughly examined the impact of model parameters on device performance, and also on each other.Furthermore, we created a way to intuitively exhibit the impact that the subgap density of states has on device performance by extraction and illustration of the trapped charge distributions in the band gap; we then optimized this technique further by tailoring the extraction bias voltage to the enhancement of the results of the impact. After a series of simulation and analysis, we were able to determine the effects of individual model parameter on device performance, and provided thorough examination into the mechanism behind each.The simulation showed that the acceptor-like density of states of indium gallium zinc oxide mainly affects drain current and threshold voltage of the device, and when increased, reduces the drain current and raises the threshold voltage; the donor-like density of states mainly affects the subthreshold region of the device and depending on its location in the band gap, increase of donor-like density of states around the Fermi level contributes to the increase of subthreshold swing, while increase of donor-like density of states above the Fermi level reduces threshold voltage; moreover, moving the donor-like density of states from the conduction band towards the valance band will reduce both the drain current and the threshold voltage. It is known that the material characteristics of indium gallium zinc oxide depend heavily on the manufacturing process, therefore the results we obtained here can help shed light upon the material definition procedure in future simulation of specific indium gallium zinc oxide semiconductor.In addition, in this work, we discussed indium gallium zinc oxide flexible device simulation and illumination characteristic simulation. The former revealed no differences between planar and curved devices. But with the absence of a feasible stress model, this could not be considered as a testament to the suitability of indium gallium zinc oxide in flexible applications. In the latter, we did observe some influences of light on indium gallium zinc oxide device. But similar to the former case, it also lacked crucial simulation model. Hence the effect resembles that of hydrogenated amorphous silicon, which consists solely of the increase of off current, but lacks the more distinctive impact on threshold voltage observed in indium gallium zinc oxide devices.