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Shape Contrast Of Self-running Ga Droplets On GaAs(711)A And(711)B Surfaces

Posted on:2015-10-28Degree:MasterType:Thesis
Country:ChinaCandidate:Eric AshalleyFull Text:PDF
GTID:2308330473952072Subject:Electronic engineering
Abstract/Summary:PDF Full Text Request
In this study, the formation of Ga droplets on GaAs(711)A and(711)B is realized in an MBE system. The first phase of the droplet epitaxy procedure is utilized. This involves heating the epitaxially ready substrate while being mindful of pressure level. This is essential, given the properties of the surface used in this study. The motion of the Ga droplet on the GaAs(711)A and(711)B is analyzed. At 680?C and 730?C(with and without Ga pre-deposition) droplets behavior, size, shape, proximity and distribution were characterized. Droplets were observed to emerge, attain a critical size at a critical temperature and initiate movements themselves. The stick-slip and back and forth motion were also observed.The geometrical and surface morphological contrast of the Ga droplet with respect to both surfaces under the observed temperatures are discussed. The GaAs(711)B surface conceived dark spots with seemingly white peripheral boundary. The direction of travel of the droplets are also characterized. Droplets on both GaAs(711)A and GaAs(711)B surfaces travelled in a unidirectional manner parallel to the cleavage plane of the respective surfaces while leaving behind trails of various geometries. The thickness of the trails were compared and realized to be significantly different, given that the droplets on the GaAs(711)A start movement later than those on the(711)B surface. Therefore, they melt down their underside much deeper than those on the(711)B surface. On both surfaces, droplets were observed to increase in size in the course of their travel.SEM images resulting from the experimental procedure are analyzed. From the SEM images, trail thickness differed and spills could be found around droplets on the GaAs(711)B surface. Possible droplet emergence positions were also observed on the GaAs(711)B substrate surface as black spots with white peripheral boundaries. The differences in observation on both surfaces were then summarized. Temperatures for observations in this study were 680?C and 730?C.Mathematical characterization of the surface and interfacial energies was established with Young’s equation. With the observed geometry of the droplets, differentials and integrals that support the interfacial energy characterization were evoked to comprehensively achieve functions for the interfacial energies.
Keywords/Search Tags:Surface Electron Microscopy(SEM), Molecular Beam Epitaxy(MBE), Pre-deposition, Shape contrast, Young’s equation
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