Failure Analysis Model Of Semiconductor Devices Based On Multi-physics Simulation

Power semiconductor devices is the bridge between weak control and strong operation. With the establishment and development of environmental protection。The scope of application of power semiconductors has changed from the traditional industrial control and 4C industry (computer, communication, consumer electronics and automotive), expansion into new energy (wind, solar energy), rail transportation, smart grid and other new areas. With the expanding demand of power devices,the power device failure analysis and reliability research needs to research more deeply and widely.Based on the knowledge of power semiconductor devices, And with the awareness of PT-IGBT,In this paper, using the theory of the motion of the solid semiconductor carrier,With the help of experimental data on the Si characteristics of foreign literatureRational failure mechanism hypothesis proposed by PT-IGBT.This paper focused on the reasonable choice of mobility model according to the material data from foreign documents. In its study, a multi-physics simulation about the V-A curve of conducting bipolar transistor BJT and unipolar MOSFET has been applied to help analyzing the temperature characteristics in their conducting state. The study verified the failure mechanism that might occur in the paralleled multi-cell PT-IGBT. A dynamically shutting transient failure model of IGBT has also been raised to simulate the effect of internal material variation in the active area upon the threshold of breakdown voltage.Based on the above, this work studied the possible failure mechanism during the off switching of IGBT, with the argument of enough attention being paid to the di/dt and du/dt tolerance in the use. The usual failure modes of power semiconductor devices have been concluded at last.