Study On Preparation And Properties Of Wide Band Gap Semiconductor Materials ZnO、TiO₂

Zinc oxide and titanium dioxide are typical of wide band gap semiconductor materials. Wide band gap semiconductor materials are the nanometer materials with manifold excellent performance and have broad application prospects.In recent years, with the rapid development of nano science and technology, nanometer materials have always been the focus of research,especially its application research.The research of controllable preparation of ZnO、 TiO2 nanostructures,and the properties and characterization of ZnO、TiO2 nanostructures have been of effective scientific impotance. This paper has two parts,the specific contents are as follows:Well-aligned ZnO nanorod arrays were prepared on FTO substrate by hydrothermal method at low temperature for 5h.The effect of ammonia on the length of ZnO nanorod was studied in detail.The resulting materials were extensively characterized by scanning electron microscopy (SEM), X-ray diffraction(XRD) and UV-visible absorption spectra (scatter mode). With the increase of ammonia, the length of ZnO nanorod increases.Monodisperse anatase titania mesoporous beads with a pore size of 18.9 nm and high surface areas of 89.76 m2g-1 were synthesized using hexylamine as a structure-directing agent by a facile sol-gel procedure,followed by a solvothermal post-treatment.It was found that the H2O contents in the synthesis affected significantly the morphology of the resultant TiO2 beads. The roughness and diameters of the beads were also affected by the reaction time: prolonging the reaction time leads to the formation of the beads with smoother surface and bigger size. The TiO2 mesoporous beads were finally employed as the photoanode of DSSCs which show a light-to-electric conversion efficiency of 5.56%, alittle higher than that made from P25. This study shows that the titania mesoporous materials may be very useful in the areas such as energy conversion and environmental cleanup.