| Active microwave device is an important part of the modern microwave communication, radar, microwave measurement and control systems, its performance directly affects the quality of the electronic systems. In the super-heterodyne systems, the performance will affects the quality of the communication system; in the military fields, such as the electronic warfare, it will affect the performance of high anti-interference; low-cost, high-stability and high-performance active microwave device is one of the most competition in the field of microwave circuits. The Ga As HEMT(HFET) device has outstanding high-frequency characteristics, low-noise characteristics, it becomes the hotspot. This paper designs some X Ku-band active microwave circuits, which are fabricated by renesas’ s HEMT, major contents of the paper are abstracted as following:1. A Ku-band low noise amplifier(LNA) is designed. The gain is more than 10 d B and a noise figure is less than 2 d B in the frequency range of 200 MHz. the 11 s is less than-8 d B, 22 s is less than-15 d B. Selecting FET with MAG/K parameter, making the FET working in the stable state, using opt? for noise, completing matching network for good performance in NF, P1 d B, IM3.2. A Ku-band oscillator is designed. The work frequency is 12 GHz, the power of oscillator is 3d Bm. Designing the loop circuit, assigning the right loop gain, adjusting the appropriate phase condition, satisfies the loop oscillation condition, and then we will have stable oscillation power.3. A Ku-band mixer is designed. The frequency range of 11.8GHz-12.2GHz, conversion gain is 1 d B. Using single-ended mixing circuit, the best mixing transconductance will be selected, then designing isolating circuit in order to improve the RF and LO, LO and the IF and RF and IF isolation ratio, we can get IM3 of more than 20 dB.In this paper, the active microwave circuit is simulated by the combination of schematic and layout in ADS, the test results is given to compare. |
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