| The memory has attracted a great deal of attention in recent years and has been widely used in various electronic products. The memory is divided into two kinds: the non-volatile memory and the volatile memory. In the non-volatile memory, resistance random access memory(RRAM) has gradually become the focus of attention due to its simple structure, high-speed performance, low power, and high integration density. In RRAM, the resistive switching mechanism based on conductive filament model has generally been accepted, and conductive filament diameters are in nanoscale, showing the potential for high-density storage. In this work, two resistive switching devices based on active metal ion transport and oxygen ion migration model were fabricated and examined. And we also explored the integrated devices, including the impact of electrodes size and some research on the crossbar structure devices.We used magnetron sputtering and photolithography techniques to prepare the Ag/Zn S/ITO and Pt/Ta2O5 /ITO resistive devices with different sized top electrodes and researched the influnce of different electrode sizes on resistive properties. It indicates that with the reducing of the electrodes size, the high resistance of both devices increases, while the low resistance shows no significant change in mechanism. Thus the ON/OFF ratio of both kinds of the devices increases. These results also prove that both kinds of the device are local conductive, and the conductive filaments pass section is localized, suggesting the promise of RRAM devices in large-scale integration and high-density storage. And based on the optical lithography and lift-off processing, the Ag/Zn S/Au crossbar devices were fabricated. Then their performances were characterized, showing that the devices can realize the high and low resistance conversion steadily and a high level of ON/OFF ratio. Therefore, the Ag/Zn S/Au crossbar devices realize the non-volatile resistive switching characteristics. |
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