Synthesis And Photoluminescence Of Zn, Cu Doped AIN Nanostructure

As the representative of the third generation of semiconductor materials, AlN have attracted great concern in light emission devices due to his widest band gap (6.2eV). However, because preparation of AlN material needs sevese conditions, which have limited its development. Additionally, Introducing different elements into AIN material is an effective method to improve his properties, thus meeting the needs of different aspects. In this paper, the suitable growing condition of AlN was obtained by reasonably regulating the controllable parameters in CVD system. Meanwhile, we investigated the effect of doping different elements on the morphology and properties of AIN. The major research contents are as follows:(1)We prepared Zn doped AIN Using anhydrous zinc chloride as source materials. Zn doping promoted the surface diffusion of AlN, unfortunately, inhibited the radial growth rate. The PL spectrum shows that samples exhibit excellent luminescence properties in ultraviolet band. The PL spectrum of samples after high temperature annealing treatment indicated that the peak at 272nm is related to Zn itself. Through a change of NH3 flow rate, it was found that the crystallinity and photoluminescence of sample were best in the 30sccm of NH3 flow rate. The oxygen-related defects change with the variation of Zn content Under the same condition, thus may modulate the relative intensity of peaks.(2) We prepared Zn doped AIN Using Zn nanopowder as source materials. The growth temperature has a significant effect on the morphology and size of nanostructure. The appearance of new defect or impurity energy levels involving Zn doping effectively adjusts the emission wavelength of AlN in the ultraviolet ragion and leads to the change of position and relative intensity of peaks. In addition, the angel of silicon installation also affects Zn doping, the results of experiment showed that it is more favorable as for doping Zn if Si is laid out parallelly.(3)Research on the synthesis and photoluminescence properties of Cu doped AlN nanostructures. The PL spectrum shows that samples exhibit excellent luminescence properties in visible band. We discussed the influence of growth temperature, doping content and the ratio of NH3/Ar on the samples. The temperature and NH3/Ar play an important role in Cu incorporation into AIN. With the increase of Cu content and the appearance of AlCu alloy phase resulted in the increase of aluminium vacancy, then changed the relative of peaks.